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Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDZ663P
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDZ663P fiche technique
FDZ663P
December 2011
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -2.7 A, 134 mΩ
Features
General Description
„ Max rDS(on) = 134 mΩ at VGS = -4.5 V, ID = -2 A
„ Max rDS(on) = 171 mΩ at VGS = -2.5 V, ID = -1.5 A
„ Max rDS(on) = 216 mΩ at VGS = -1.8 V, ID = -1 A
„ Max rDS(on) = 288 mΩ at VGS = -1.5 V, ID = -1 A
„ Occupies only 0.64 mm2 of PCB area. Less than 16% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.4 mm height when mounted
to PCB
„ RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ663P minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile (0.4
mm) and small (0.8x0.8 mm2) packaging, low gate charge, and
low rDS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
S
DS
G
Pin 1
S
G
BOTTOM
Pin 1
TOP
WL-CSP 0.8X0.8 Thin
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-2.7
-10
1.3
0.4
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
93
311
°C/W
Device Marking
EJ
Device
FDZ663P
Package
WL-CSP 0.8X0.8 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2011 Fairchild Semiconductor Corporation
FDZ663P Rev.C1
1
www.fairchildsemi.com

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