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FDS4141 fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDS4141
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS4141 fiche technique
November 2007
FDS4141
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 13.0m
Features
„ Max rDS(on) = 13.0mat VGS = -10V, ID = -10.5A
„ Max rDS(on) = 19.0mat VGS = -4.5V, ID = -8.4A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the applications and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
„ Control switch in synchronous & non-synchronous buck
„ Load switch
„ Inverter
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-40
±20
-10.8
-36
294
5
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS4141
Device
FDS4141
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
1
www.fairchildsemi.com

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