FDT86102LZ Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - MOSFET ( Transistor )

شماره قطعه	FDT86102LZ
شرح مفصل	MOSFET ( Transistor )
تولید کننده	Fairchild Semiconductor
آرم
1 Page No Preview Available ! November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A „ Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ DC-DC conversion „ Inverter „ Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings 100 ±20 6.6 40 84 2.2 1.0 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 12 55 °C/W Device Marking 86102LZ Device FDT86102LZ Package SOT-223 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C 1 www.fairchildsemi.com
قانون اساسی	صفحه 7
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دیتاشیت توصیه

شماره قطعه	شرح مفصل	تولید کنندگان
FDT86102LZ	MOSFET ( Transistor )	Fairchild Semiconductor

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