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PDF FDT86244 Data sheet ( Hoja de datos )

Número de pieza FDT86244
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDT86244 Hoja de datos, Descripción, Manual

January 2016
FDT86244
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 2.8 A, 128 mΩ
Features
General Description
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A
„ Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A
„ High Performance Trench Technology for Extremely Low
rDS(on)
„ High Power and Current Handling Capability in a Widely Used
Surface Mount Package
„ Fast Switching Speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
„ Load Switch
„ Primary Switch
D
SOT-223
S
D
G
D
GDS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2.8
12
12
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
12
55
°C/W
Device Marking
86244
Device
FDT86244
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDT86244 Rev.1.3
1
www.fairchildsemi.com

1 page




FDT86244 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 118 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDT86244 Rev.1.3
5
www.fairchildsemi.com

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