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Numéro de référence | FDC610PZ | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FDC610PZ
P-Channel PowerTrench® MOSFET
–30V, –4.9A, 42mΩ
Features
General Description
August 2007
tm
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A
Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A
Low gate charge (17nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
Application
DC - DC Conversion
S
D
D
Pin 1
G
D
D
SuperSOTTM -6
D1
D2
G 33
6D
5D
4S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–30
±25
–4.9
–20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.610Z
Device
FDC610PZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDC610PZ Rev.B
1
www.fairchildsemi.com
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Pages | Pages 7 | ||
Télécharger | [ FDC610PZ ] |
No | Description détaillée | Fabricant |
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