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FDN86265P fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDN86265P
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN86265P fiche technique
May 2014
FDN86265P
P-Channel PowerTrench® MOSFET
-150 V, -0.8 A, 1.2 Ω
Features
General Description
„ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A
„ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A
„ Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
„ This product is optimised for fast switching applications as
well as load switch applications
„ 100% UIL tested
„ RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been optimized for the on-state resistance and yet maintain
superior switching performance.
Applications
„ Active Clamp Switch
„ Load Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-150
±25
-0.8
-5
6
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
75
80
°C/W
Device Marking
265
Device
FDN86265P
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDN86265P Rev.C
1
www.fairchildsemi.com

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