DataSheetWiki


FDG8842CZ fiches techniques PDF

Fairchild Semiconductor - MOSFET ( Transistor )

Numéro de référence FDG8842CZ
Description MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FDG8842CZ fiche technique
FDG8842CZ
Complementary PowerTrench® MOSFET
April 2007
tm
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Features
Q1: N-Channel
„ Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
„ Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Q2: P-Channel
„ Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
„ Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
„ Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th) <1.5V)
„ Very small package outline SC70-6
General Description
These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage applica-
tions as a replacement for bipolar digital transistors and small
signal MOSFETs. Since bias resistors are not required, this dual
digital FET can replace several different digital transistors, with
different bias resistor values.
„ RoHS Compliant
S2
G2
D1
SC70-6
Pin 1
D2
G1
S1
S1 Q1
G1
D2 Q2
D1
G2
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
Package Marking and Ordering Information
Device Marking
.42
Device
FDG8842CZ
Reel Size
7”
(Note 1a)
(Note 1b)
Q1 Q2
30 –25
±12 –8
0.75 –0.41
2.2 –1.2
0.36
0.30
–55 to +150
Units
V
V
A
W
°C
(Note 1a)
(Note 1b)
350
415
°C/W
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
1
www.fairchildsemi.com

PagesPages 9
Télécharger [ FDG8842CZ ]


Fiche technique recommandé

No Description détaillée Fabricant
FDG8842CZ MOSFET ( Transistor ) Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche