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Fairchild Semiconductor - IGBT

Numéro de référence FGA6530WDF
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA6530WDF fiche technique
FGA6530WDF
650 V, 30 A Field Stop Trench IGBT
August 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for welder and industial applications where low conduction and
switching losses are essential.
Applications
• Welder and Industrial Application
• Power Factor Correction
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 55.9  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2015 Fairchild Semiconductor Corporation
FGA6530WDF Rev. 1.1
1
C
G
E
FGA6530WDF
650
20
30
60
30
90
90
30
15
60
176
88
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

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