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Fairchild Semiconductor - IGBT

Numéro de référence FGA20S125P
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA20S125P fiche technique
November 2014
FGA20S125P
1250 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave oven
General Description
Using advanced field stop trench and shorted anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
G
E
FGA20S125P_SN00336
1250
±25
40
20
60
40
20
250
125
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
© 2014 Fairchild Semiconductor Corporation
FGA20S125P Rev. C1
1
www.fairchildsemi.com

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