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FGB20N60SFD Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - IGBT

شماره قطعه FGB20N60SFD
شرح مفصل IGBT
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 


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FGB20N60SFD شرح
March 2015
FGB20N60SFD
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
COLLECTOR
(FLANGE)
GC E
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
±20
±30
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2011 Fairchild Semiconductor Corporation
FGB20N60SFD Rev. 1.6
1
www.fairchildsemi.com

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