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STA3350L fiches techniques PDF

KODENSHI - PNP Silicon Transistor

Numéro de référence STA3350L
Description PNP Silicon Transistor
Fabricant KODENSHI 
Logo KODENSHI 





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STA3350L fiche technique
Applications
Power amplifier application
High current switching application
Features
Low saturation voltage:
VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA
Large collector current capacity: IC=-3A
STA3350L
PNP Silicon Transistor
PIN Connection
1: Emitter 2 :Collector 3: Base
Ordering Information
Type NO.
STA3350L
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation(Ta=25°C)
Junction temperature
Storage temperature range
* : Single pulse, tp= 300
Marking
STA3350
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
TJ
Tstg
Package Code
TO-92L
Rating
-50
-50
-6
-3
-6
1
150
-55~150
[Ta=25]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
KSD-T0D011-000
1

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