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STA3073F fiches techniques PDF

KODENSHI - PNP Silicon Transistor

Numéro de référence STA3073F
Description PNP Silicon Transistor
Fabricant KODENSHI 
Logo KODENSHI 





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STA3073F fiche technique
Applications
Power amplifier application
High current switching application
Features
High collector breakdown voltage
: VCEO=-120V
Low collector saturation voltage
: VCE(sat)=-0.5V(Max.)
Ordering Information
Type NO.
STA3073F
Marking
P73
Marking Diagram
P73
YWW
Column 1: Device Code
Column 2: Year & Week Code
STA3073F
PNP Silicon Transistor
PIN Connection
SOT-89
Package Code
SOT-89
Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP*
Collector Power dissipation
PC
PC**
Junction temperature
TJ
Storage temperature range
* : Single pulse, tp= 300
** : Device mounted on ceramic substrate (250mm20.8t)
Tstg
KSD-T5B032-000
Rating
-120
-120
-6
-1
-2
0.5
1
150
-55~150
(Ta=25)
Unit
V
V
V
A(DC)
A(Pulse)
W
C
C
1

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