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PDF FQP10N60 Data sheet ( Hoja de datos )
| Número de pieza | FQP10N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Oucan Semi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FQP10N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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FQP10N60-FQPF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The FQP10N60 & FQPF10N60 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
40A
< 0.7Ω
23nC
3.4µJ
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP10N60 FQB10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C,J
Repetitive avalanche energy C,J
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
10 10*
ID 6.6 6.6*
IDM
IAR
EAR
EAS
dv/dt
40
10
50
480
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
208 43
1.7 0.34
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
FQP10N60
65
0.5
0.6
FQB10N60
65
--
2.9
FQPF10N60
10*
6.6*
32
0.26
FQPF10N60
65
--
3.9
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 7
1 page  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
RDS(ON)
10 limited
10µs
100µs
100
RDS(ON)
10 limited
10µs
100µs
1 DC 1ms
10ms
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
100 1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT10T60 (Note F)
1 1ms
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
DC
100
10ms
0.1s
1s
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF10T60 (Note F)
100
RDS(ON)
10 limited
10µs
100µs
1 1ms
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
DC
100
10ms
0.1s
1s
1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF10T60L (Note F)
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FQP10N60.PDF ] | |
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