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ROHM Semiconductor - 30V Nch+Nch Middle Power MOSFET

Numéro de référence HP8K24
Description 30V Nch+Nch Middle Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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HP8K24 fiche technique
HP8K24
  30V Nch+Nch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Nch
30V 30V
8.8mΩ 3.0mΩ
±27A ±80A
22W 31W
lFeatures
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
lOutline
HSOP8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
DC/DC Converter
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
HP8K24
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Nch
Unit
Drain - Source voltage
VDSS
30 30
V
Continuous drain current
ID*1
±27 ±80
A
ID
±15 ±26
A
Pulsed drain current
IDP*2
±60 ±80
A
Gate - Source voltage
VGSS
±20 ±20
V
Avalanche current, single pulse
IAS*3
15 26
A
Avalanche energy, single pulse
EAS*3
16.5 51.2
mJ
Power dissipation
element
total
PD*1
22 31
W
PD*4 3.0 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/16
20160627 - Rev.001    

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