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QH8JA1 Datasheet دیتاشیت PDF دانلود

دیتاشیت - ROHM - MOSFET

شماره قطعه QH8JA1
شرح مفصل MOSFET
تولید کننده ROHM 
آرم ROHM 


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QH8JA1 شرح
QH8JA1
  -20V Pch +Pch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-20V
38mΩ
±5.0A
1.5W
lFeatures
1) Low on - resistance.
2) Small surface mount package(TSMT8)
3) -1.8V Drive.
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
JA1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.0 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±10 V
Avalanche current, single pulse
IAS*3 -5.0 A
Avalanche energy, single pulse
EAS*3
8.9 mJ
Power dissipation (total)
PD*4 1.5
W
PD*5 1.1
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20151210 - Rev.001

قانون اساسیصفحه 14
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