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QH8KA2 fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence QH8KA2
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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QH8KA2 fiche technique
QH8KA2
  30V Nch+Nch Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
35mΩ
±4.5A
1.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TSMT8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Motor Drive
Taping code
TR
Marking
KA2
lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,
*1
pulse
VGSS
EAS*2
IAS*2
PD*3
Tj
Tstg
30
±4.5
±12
±20
1.5
4.5
1.5
150
-55 to +150
V
A
A
V
mJ
A
W
                                              
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140806 - Rev.002    

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