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QH8KA4 Datasheet دیتاشیت PDF دانلود
دیتاشیت - ROHM Semiconductor - MOSFET ( Transistor )
| شماره قطعه | QH8KA4 | ||
| شرح مفصل | MOSFET ( Transistor ) | ||
| تولید کننده | ROHM Semiconductor | ||
| آرم |  |
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1 Page
QH8KA4
30V Nch+Nch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
17.0mΩ
±9.0A
1.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package .
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
5) 100% avalanche tested.
lOutline
TSMT8
lInner circuit
Datasheet
lApplication
Switching
Battery
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
KA4
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Pulsed drain current
ID ±9.0 A
IDP*1 ±40 A
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
VGSS
IAS*2
EAS*2
±12 V
9.0 A
6.2 mJ
Power dissipation
total
element
1.5
PD*3
1.25 W
total PD*4 1.1
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150903 - Rev.002
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| قانون اساسی | صفحه 14 | ||
| دانلود | [ QH8KA4 دیتاشیت ] | ||
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| QH8KA4 | MOSFET ( Transistor ) | ROHM Semiconductor |
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