DataSheetWiki


R6008MND3 fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence R6008MND3
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





R6008MND3 fiche technique
R6008MND3
  Nch 600V 8A Power MOSFET
   Datasheet
VDSS
600V
lOutline
 
RDS(on)(Max.)
0.610Ω
ID
±8A
TO-252
PD
115W
 
      
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6008M
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±8 A
Pulsed drain current
IDP*2 ±24 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.25 A
Avalanche energy, single pulse
EAS*3
0.42 mJ
Power dissipation (Tc = 25°C)
PD 115 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.002    

PagesPages 14
Télécharger [ R6008MND3 ]


Fiche technique recommandé

No Description détaillée Fabricant
R6008MND3 MOSFET ( Transistor ) ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche