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Numéro de référence | R6030MNX | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
R6030MNX
Nch 600V 30A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.150Ω
ID
±30A
TO-220FM
PD
90W
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
500
Taping code
-
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6030MNX
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±30 A
Pulsed drain current
IDP*2 ±90 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 5.0 A
Avalanche energy, single pulse
EAS 6.7 mJ
Power dissipation (Tc = 25°C)
PD 90 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160713 - Rev.000
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Pages | Pages 14 | ||
Télécharger | [ R6030MNX ] |
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