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R6047MNZ fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence R6047MNZ
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R6047MNZ fiche technique
R6047MNZ
  Nch 600V 47A Power MOSFET
   Datasheet
VDSS
600V
lOutline
 
RDS(on)(Max.)
0.081Ω
ID
±47A
TO-3PF
PD
102W
 
      
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
360
Taping code
C8
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6047MNZ
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±47 A
Pulsed drain current
IDP*2
±141
A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 7.0 A
Avalanche energy, single pulse
EAS
13.35
mJ
Power dissipation (Tc = 25°C)
PD 102 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160727 - Rev.003    

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