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PDF R8008ANJ Data sheet ( Hoja de datos )
| Número de pieza | R8008ANJ | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
800V
0.98W
8A
40W
lOutline
LPT(S)
(SC-83)
(2)
(1)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R8008ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAS*3
PD
Tj
Tstg
dv/dt *5
800
8.0
4.3
32
30
4.2
3.4
4.0
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.10 - Rev.A
1 page  
R8008ANJ
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 80ºC/W
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 10 100 1000
Pulse Width : PW [s]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/13
2013.10 - Rev.A
5 Page 
R8008ANJ
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
1 Ta= -25ºC
VGS=0V
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
10000
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
1000
0.1 100
0.01
0.0 0.5 1.0 1.5
Source - Drain Voltage : VSD [V]
10
0.1 1 10
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
11/13
2013.10 - Rev.A
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R8008ANJ.PDF ] | |
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