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RQ5E070BN fiches techniques PDF

ROHM Semiconductor - Power MOSFET ( Transistor )

Numéro de référence RQ5E070BN
Description Power MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RQ5E070BN fiche technique
RQ5E070BN
  Nch 30V 7A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
16.1mΩ
±7A
1.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT3).
3) Pb-free lead plating ; RoHS compliant
lOutline
SOT-346T
SC-96
TSMT3
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCL
Marking
BA
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*4
PD*5
Tj
Tstg
30
±7
±18
±20
7.0
17.5
1.0
0.76
150
-55 to +150
V
A
A
V
A
mJ
W
W
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160515 - Rev.001    

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