P2103NVG Datasheet PDF - NIKO-SEM
| Part Number | P2103NVG | |
| Description | N- & P-Channel Enhancement Mode Field Effect Transistor | |
| Manufacturers | NIKO-SEM | |
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There is a preview and P2103NVG download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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NIKO-SEM
N- & P-Channel Enhancement Mode
P2103NVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 21mΩ
P-Channel -30 34mΩ
ID
8A
-6A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
L = 0.1mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
8 -6
6 -5 A
36 -27
26 -27
35 38 mJ
2
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.7 2.5
P-Ch -1 -1.6 -2.5
V
REV 1.0
1 Oct-06-2010
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NIKO-SEM
N- & P-Channel Enhancement Mode
P2103NVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Gate charge Characteristics
10
8
ID=7A
V DS=15V
6
Source-Drain Diode Forward Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
TJ =150° C
TJ =25° C
1.0E-02
4
1.0E-03
2
1.0E-04
0
0 5 10 15
Qg , Total Gate Charge(nC)
Safe Operating Area
100
Ope ration in This Area
is Lim ited by RDS(ON)
↓10
1.0E-05
20 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
100
90
80 SINGLE PULSE
RθJA =62.5˚ C/W
70 TA=25˚ C
100us
60
1
1m s
50
10m s
100m s
0.1 NOTE :
1.VGS= 10V
2.TA=25˚ C
3.RθJA = 62.5˚ C/W
4.Single Pulse
0.01
0.1 1 10
VDS, Drain-To-Source Voltage(V)
1S
10S
DC
100
40
30
20
10
0
0.0001
0.001
0.01
0.1
1
Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
10
1.00E+00
1.00E-01
1.00E-02
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
1.00E-03
single Pluse
1.00E-04
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJA = 62.5 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
1.E+00
1.E+01
1.E+02
REV 1.0
5 Oct-06-2010
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P2103NVG electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. - N- & P-Ch, MOSFET [ Learn More ] | |
| Download | [ P2103NVG.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| P2103NV | The function is N- & P-Channel Enhancement Mode Field Effect Transistor. Niko |  |
| P2103NVG | The function is N- & P-Channel Enhancement Mode Field Effect Transistor. NIKO-SEM | |
| P2103NVG | The function is N & P-Channel Enhancement Mode MOSFET. UNIKC |  |
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