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PDF P0465ATF Data sheet ( Hoja de datos )
| Número de pieza | P0465ATF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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P0465ATF / P0465ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.5Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
4
2.2
16
23.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD=50V,L=10mH,starting TJ=25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5
62.5
UNITS
°C / W
Ver 1.0
1 2012/8/3
1 page  
P0465ATF / P0465ATFS
N-Channel Enhancement Mode MOSFET
Ver 1.0
5 2012/8/3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet P0465ATF.PDF ] | |
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