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Numéro de référence | KTD545 | ||
Description | EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
ᴌLow Saturation Voltage
: VCE(sat)=0.3V(Max.) at IC=0.5A.
ᴌComplementary to KTB598.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
30
25
5
1
625
150
-55ᴕ150
UNIT
V
V
V
A
mW
ᴱ
ᴱ
KTD545
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=20V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=1A(Pulse)
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400
MIN.
-
-
70
30
-
-
-
-
TYP.
-
-
-
-
0.1
0.85
180
15
MAX.
0.1
0.1
400
-
0.3
1.2
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
1999. 8. 7
Revision No : 1
1/2
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Pages | Pages 2 | ||
Télécharger | [ KTD545 ] |
No | Description détaillée | Fabricant |
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