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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P2615ATFG
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P2615ATFG fiche technique
P2615ATFG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
26mΩ @VGS = 10V
ID
28A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
28
16
84
Avalanche Current
IAS 12
Avalanche Energy
L = 10mH
EAS
753
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
45
18
Operating Junction & Storage Temperature Range
Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.8
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/13

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