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P0460ETF fiches techniques PDF

UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0460ETF
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0460ETF fiche technique
P0460ETF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.3Ω @VGS = 10V
ID
4A
TO-220F
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
4
2.5
20
4.3
92
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
33
13.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 100V , L = 10mH, starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.7
62.5
UNITS
°C / W
REV 1.0
1 2015/3/13

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