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P0908AT Datasheet دیتاشیت PDF دانلود

دیتاشیت - NIKO-SEM - N-Channel Field Effect Transistor

شماره قطعه P0908AT
شرح مفصل N-Channel Field Effect Transistor
تولید کننده NIKO-SEM 
آرم NIKO-SEM 


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P0908AT شرح
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908AT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 9mΩ
ID
64A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 ° C
TC = 100 ° C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 ° C
TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
80
±20
64
41
160
49
120
83
33
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
1.5
50
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNITS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
80
2 3.4
4
V
IGSS VDS = 0V, VGS = ±20V
±100 nA
IDSS
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 ° C
1
10 A
REV 1.1
1
F-50-4

قانون اساسیصفحه 4
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