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P8010BTF Datasheet دیتاشیت PDF دانلود

دیتاشیت - NIKO-SEM - N-Channel Field Effect Transistor

شماره قطعه P8010BTF
شرح مفصل N-Channel Field Effect Transistor
تولید کننده NIKO-SEM 
آرم NIKO-SEM 


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P8010BTF شرح
NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
11A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
100
±20
11
7
35
14
10
24
9.6
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
5.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 11A
VDS = 10V, ID = 11A
LIMITS UNIT
MIN TYP MAX
100
1.3 1.8 2.3
V
±100 nA
1
10 A
61 95
mΩ
59 85
28 S
REV1.1
1
D-51-5

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