|
|
Numéro de référence | P2610ATG | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P2610ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID
50A
TO-220
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
TC = 25 °C
TC = 100 °C
L = 0.3mH
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
EAS
PD
±20
50
31
200
77
900
128
51
Operating Junction & Storage Temperature Range
Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RθJC
RθJA
RθCS
TYPICAL
0.5
MAXIMUM UNITS
0.97
62.5
°C / W
Ver 1.0
1 2011/4/8
|
|||
Pages | Pages 4 | ||
Télécharger | [ P2610ATG ] |
No | Description détaillée | Fabricant |
P2610ATFG | N-Channel Enhancement Mode MOSFET | UNIKC |
P2610ATG | N-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |