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P2615ATG Datasheet دیتاشیت PDF دانلود

دیتاشیت - UNIKC - N-Channel Enhancement Mode MOSFET

شماره قطعه P2615ATG
شرح مفصل N-Channel Enhancement Mode MOSFET
تولید کننده UNIKC 
آرم UNIKC 


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P2615ATG شرح
P2615ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
26mΩ @VGS = 10V
ID
53A
TO-220 100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
53
34
160
37
Avalanche Energy
L = 0.3 mH
EAS
210
Power Dissipation
TC= 25 °C
TC= 100°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
178
71
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.7
62.5
UNITS
°C / W
REV 1.1
1 2014/5/28

قانون اساسیصفحه 5
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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
P2615ATFG N-Channel Enhancement Mode MOSFET UNIKC
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P2615ATG N-Channel Enhancement Mode MOSFET UNIKC
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