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CJU80N03 Datasheet دیتاشیت PDF دانلود

دیتاشیت - JCET - N-Channel Power MOSFET

شماره قطعه CJU80N03
شرح مفصل N-Channel Power MOSFET
تولید کننده JCET 
آرم JCET 


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CJU80N03 شرح
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU80N03
V(BR)DSS
30V
N-Channel Power MOSFET
RDS(on)MAX
6.5mΩ@10V
10mΩ@ 5V
 
 
ID
80A
TO-252-2L
DESCRIPTION
The CJU80N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
1. GATE
2. DRAIN
3. SOURCE
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Good stability and uniformity with high EAS
APPLICATIONS
z Power switching application
z Uninterruptible Power Supply
z Hard switched and high frequency circuits
MARKING
EQUIVALENT CIRCUIT
CJU80N03= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=20V,L=0.5mH, RG=25, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
30
±20
80
320
306
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
/W
www.cj-elec.com
1
A,Mar,2016

قانون اساسیصفحه 5
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