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Numéro de référence | CJU80N03 | ||
Description | N-Channel Power MOSFET / Transistor | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU80N03
V(BR)DSS
30V
N-Channel Power MOSFET
RDS(on)MAX
6.5mΩ@10V
10mΩ@ 5V
ID
80A
TO-252-2L
DESCRIPTION
The CJU80N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
1. GATE
2. DRAIN
3. SOURCE
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Good stability and uniformity with high EAS
APPLICATIONS
z Power switching application
z Uninterruptible Power Supply
z Hard switched and high frequency circuits
MARKING
EQUIVALENT CIRCUIT
CJU80N03= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
30
±20
80
320
306
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A,Mar,2016
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Pages | Pages 5 | ||
Télécharger | [ CJU80N03 ] |
No | Description détaillée | Fabricant |
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