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D2611 Datasheet دیتاشیت PDF دانلود

دیتاشیت - JCET - NPN Transistor

شماره قطعه D2611
شرح مفصل NPN Transistor
تولید کننده JCET 
آرم JCET 


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D2611 شرح
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D 2611 TRANSISTOR (NPN)
FEATURE
power switching applications
TO-126
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector -Base Voltage
600 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation
1W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tS
tf
Test conditions
IC= 100μA, IE=0
IC= 1mA , IB=0
IE= 100μ A , IC=0
VCB= 600V, IE=0
VCE= 400V, IB=0
VEB=7V, IC=0
VCE=20V, IC=20mA
VCE=10V, IC= 0.25mA
IC= 50mA, IB= 10mA
IC= 100mA, IB= 20mA
IC= 50mA, IB=10mA
VCE=20V,IC=20mA
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
Min Typ
600
400
7
10
5
5
Max Unit
V
V
V
100 μA
200 μA
100 μA
40
0.5 V
0.6 V
1.2 V
MHz
0.3 μs
1.5 μs
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
www.cj-elec.com
1
B,Oct,2014

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