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دیتاشیت - JCET - Dual Transistors

شماره قطعه EMT1
شرح مفصل Dual Transistors
تولید کننده JCET 
آرم JCET 


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EMT1 شرح
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMT1 DUAL TRANSISTOR(PNP+PNP)
FEATURES
z Two 2SA1037AK chips in a package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent,eliminating interference
Marking: T1
SOT-563
Absolute maximum ratings (Ta=25)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
V(BR)CBO IC=-50μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-50μA, IC=0
ICBO
VCB=-60V, IE=0
IEBO VEB=-7V, IC=0
hFE VCE=-6V, IC=-1mA
VCE(sat) IC=-50mA, IB=-5mA
fT VCE=-12V, IC=-2mA, f=100MHz
Cob VCB=-12V, IE=0, f=1MHz
Value
-60
-50
-6
-150
150
150
-55-150
Units
V
V
V
mA
mW
Min Typ Max Unit
-60 V
-50 V
-6 V
-0.1 μA
-0.1 μA
120 560
-0.5 V
140 MHz
5 pF
www.cj-elec.com
1
D,May,2015

قانون اساسیصفحه 4
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