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EMX18 Datasheet دیتاشیت PDF دانلود

دیتاشیت - JCET - Dual Transistors

شماره قطعه EMX18
شرح مفصل Dual Transistors
تولید کننده JCET 
آرم JCET 


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EMX18 شرح
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMX18 DUAL TRANSISTOR(NPN+NPN)
SOT-563
FEATURES
z Two 2SC5585 chips in a package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mounting cost and area be cut in half
Marking: X18
Equivalent circuit
1
Absolute maximum ratings (Ta=25)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
15
12
6
500
150
150
-55-150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=10μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10μA, IC=0
ICBO
VCB=15V, IE=0
IEBO
VEB=6V, IC=0
hFE VCE=2V, IC=10mA
VCE(sat) IC=200mA, IB=10mA
fT VCE=2V, IE=-10mA, f=100MHz
Cob VCB=10V, IE=0, f=1MHz
Min Typ Max Unit
15 V
12 V
6V
0.1 μA
0.1 μA
270 680
0.25 V
320 MHz
7.5 pF
wwww.c.jc-ej-leelce.cc.ocmom
1
A,JuCS,Sn,e2p0,124016

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