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P3606BD Datasheet دیتاشیت PDF دانلود

دیتاشیت - UNIKC - N-Channel Enhancement Mode MOSFET

شماره قطعه P3606BD
شرح مفصل N-Channel Enhancement Mode MOSFET
تولید کننده UNIKC 
آرم UNIKC 


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P3606BD شرح
P3606BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 36mΩ @VGS = 10V
ID
22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
22
14
45
Avalanche Current
IAS 18
Avalanche Energy
L=0.1mH
EAS
16
Power Dissipation
TC= 25 °C
TC= 100°C
PD
39
15.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
REV 1.0
1 2014/12/4

قانون اساسیصفحه 5
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