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P6006BD Datasheet دیتاشیت PDF دانلود

دیتاشیت - UNIKC - N-Channel Enhancement Mode MOSFET

شماره قطعه P6006BD
شرح مفصل N-Channel Enhancement Mode MOSFET
تولید کننده UNIKC 
آرم UNIKC 


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P6006BD شرح
P6006BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 60mΩ @VGS = 10V
ID
21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
21
17
85
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
32
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
75
UNITS
°C / W
Ver 1.1
1 2013-3-25

قانون اساسیصفحه 5
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