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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P6010DDG
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P6010DDG fiche technique
P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID
-20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-20
-12
-60
Avalanche Current
IAS -54
Avalanche Energy
L = 0.1mH
EAS
149
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
75
UNITS
°C / W
REV 1.2
1 2014/5/26

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