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P0460ED Datasheet دیتاشیت PDF دانلود

دیتاشیت - UNIKC - N-Channel Enhancement Mode MOSFET

شماره قطعه P0460ED
شرح مفصل N-Channel Enhancement Mode MOSFET
تولید کننده UNIKC 
آرم UNIKC 


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P0460ED شرح
P0460ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.3Ω @VGS = 10V
ID
4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current12
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
4
2.5
20
4
Avalanche Energy3
EAS 80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚ C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2
62.5
UNITS
°C / W
REV 1.1
1 2015/7/29

قانون اساسیصفحه 8
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