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دیتاشیت - UNIKC - N-Channel Enhancement Mode MOSFET

شماره قطعه P0260AD
شرح مفصل N-Channel Enhancement Mode MOSFET
تولید کننده UNIKC 
آرم UNIKC 


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P0260AD شرح
P0260AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.6Ω @VGS = 10V
ID
2A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current12
Avalanche Current3
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
2
1.3
7
2
Avalanche Energy3
EAS 20
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
REV 1.0
1 2014-3-12

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