(PDF) P1006BD Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1006BD
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 66 42 150 Avalanche Current IAS 38.5 Avalanche Energy L =0.1mH EAS 74 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 30A. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 1.3 UNITS °C / W REV 1.1 1 2015/8/20 1 page P1006BD N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2015/8/20 5 Page

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PDF P1006BD Data sheet ( Hoja de datos )