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P3606BK Datasheet دیتاشیت PDF دانلود

دیتاشیت - NIKO-SEM - N-Channel Field Effect Transistor

شماره قطعه P3606BK
شرح مفصل N-Channel Field Effect Transistor
تولید کننده NIKO-SEM 
آرم NIKO-SEM 


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P3606BK شرح
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P3606BK
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ
ID
17A
D
G
S
D DDD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
60
±20
17
11
40
6
5
17.8
15.8
27
11
3
2
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RJA
RJA
40
70 °C / W
Junction-to-Case
Steady-State
RJC
4.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RJA t 10s value.
REV 1.0
1
E-47-3

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