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P0920AD Datasheet دیتاشیت PDF دانلود

دیتاشیت - NIKO-SEM - N-Channel Field Effect Transistor

شماره قطعه P0920AD
شرح مفصل N-Channel Field Effect Transistor
تولید کننده NIKO-SEM 
آرم NIKO-SEM 


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P0920AD شرح
NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200 0.42Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 2.8mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Limited by package.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
9
5.8
36
9
112
62
25
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
200
2 2.6
4
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
A
10
VGS = 10V, ID = 4.5A
0.35 0.42 Ω
VDS = 10V, ID = 4.5A
10 S
REV1.0
1
D-51-1

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