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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P3506DD
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P3506DD fiche technique
P3506DD
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ @VGS = -10V
ID
-26A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-26
-16
-100
Avalanche Current
Avalanche Energy2
L = 0.1mH
IAS
EAS
-39
77
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD = -30V Starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
50
UNITS
°C / W
Ver 1.1
1 2013-3-22

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