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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P2B60AMA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P2B60AMA fiche technique
P2B60AMA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
200Ω @VGS = 10V
ID
40mA
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
40
31
120
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.7
0.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
mA
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
178 °C / W
REV 1.0
1 2015/4/29

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