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Numéro de référence | PA606BMG | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
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PA606BMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
55V 180mΩ @VGS = 10V
ID
1.6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 55
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
1.6
1
11
Avalanche Current
IAS 11
Avalanche Energy
L = 0.1mH
EAS
6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.8
0.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
140 °C / W
Ver 1.0
1 2012/4/12
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Pages | Pages 5 | ||
Télécharger | [ PA606BMG ] |
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