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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P6503FMA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P6503FMA fiche technique
P6503FMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
55mΩ @VGS = -10V
ID
-3.1A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.1
-2.4
-12
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.96
0.62
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM
130
UNITS
°C / W
REV 1.2
1 2016/1/22

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