(PDF) PM509BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PM509BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PM509BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 120mΩ @VGS = 10V ID -2A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2 -1.5 -8 Power Dissipation TA = 25 °C TA = 70 °C PD 0.7 0.4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper MAXIMUM UNITS 177 °C / W Rev 1.1 1 2015/10/13 1 page PM509BA P-Channel Enhancement Mode MOSFET Rev 1.1 5 2015/10/13 5 Page

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PDF PM509BA Data sheet ( Hoja de datos )