(PDF) PM523BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PM523BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PM523BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 80mΩ @VGS = -10V ID -2.5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2.5 -2 -10 Power Dissipation TA = 25 °C TA = 70 °C PD 0.8 0.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 139 1limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014/8/22 1 page PM523BA P-Channel Enhancement Mode MOSFET REV 1.0 5 2014/8/22 5 Page

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PDF PM523BA Data sheet ( Hoja de datos )