|
|
Numéro de référence | PM557BA | ||
Description | P-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PM557BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
50mΩ @VGS = -4.5V
ID
-3.3A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.3
-2.6
-16
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.6
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.
MAXIMUM
130
UNITS
°C / W
REV 1.0
1 2015/5/19
|
|||
Pages | Pages 5 | ||
Télécharger | [ PM557BA ] |
No | Description détaillée | Fabricant |
PM557BA | P-Channel Enhancement Mode MOSFET | UNIKC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |